Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof

ABSTRACT

A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 99117433, filed on May 31, 2010. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND

1. Technical Field

The disclosure is related to a gas barrier substrate and a fabricatingmethod thereof, and in particular to a package of an organicelectro-luminescent device and a packaging method thereof.

2. Related Art

Compared with general rigid substrates, flexible substrates haveapplications in a wider range of areas. Flexible substrates haveadvantages such as flexibility, portability, compliance with safetystandards, and wide range of applications, but they also havedisadvantages such as inferior heat resistance, inferior water andoxygen resistance, inferior chemical resistance, and greater thermalexpansion coefficients. Since conventional flexible substrates cannotcompletely block water vapor or oxygen, aging of electronic devices onthe substrate is accelerated, thereby shorting the lifespan of theelectronic devices. Commercial requirements are hence unable to befulfilled. In order to make flexible substrates have better water vaporand oxygen resistance, conventional art has provided a flexiblesubstrate with a gas barrier layer for enhancing reliability of theelectronic devices. FIGS. 1 and 2 are illustrated and conventionalflexible gas barrier substrate is described as follow.

FIG. 1 is a schematic cross-sectional diagram of a conventional flexiblegas barrier substrate. Please refer to FIG. 1. A conventional flexiblegas barrier substrate 100 is generally fabricated on a carrier C andincludes a substrate 110 and a gas barrier layer 120. The gas barrierlayer 120 only covers a top surface 110 a and a sidewall 110 b of thesubstrate 110, and a bottom surface 110 c contacts the carrier C. Asshown in FIG. 1, when the flexible gas barrier substrate 100 is detachedfrom the carrier C, the bottom surface 110 c of the substrate 110 isexposed. Since the bottom surface 110 c of the substrate 110 is notcovered by the gas barrier layer 120, the flexible gas barrier substrate100 warps seriously due to imbalance of stress.

In order to resolve the warp problems of the flexible gas barriersubstrate, the conventional art has provided a solution, which isillustrated in detail in FIG. 2.

FIG. 2 is a schematic cross-sectional diagram of another conventionalflexible gas barrier substrate. Please refer to FIG. 2. A conventionalflexible gas barrier substrate 200 is also fabricated on the carrier Cand includes a substrate 210, a first gas barrier layer 220, and asecond gas barrier layer 230. The first gas barrier layer 220 onlycovers a bottom surface 210 c of the substrate 210, and the second gasbarrier layer 230 covers a top surface 210 a and a sidewall 210 b of thesubstrate 210 and a sidewall 220 a of the first gas barrier layer 220.As shown in FIG. 2, the second gas barrier layer 230 is bonded with thesidewall 220 a of the first gas barrier layer 220. However, as limitedby the thickness of the first gas barrier layer 220, the bondingstrength between the second gas barrier layer 230 and the sidewall 220 aof the first gas barrier layer 220 is insufficient. Therefore, when theflexible gas barrier substrate 200 is bended, the second gas barrierlayer 230 which covers the sidewall 210 b may be easily broken.Moreover, if the thickness of the first gas barrier layer 220 isincreased for increasing the bonding strength between the second gasbarrier layer 230 and the sidewall 220 a of the first gas barrier layer220, the overall thickness of the flexible gas barrier substrate 200 mayincrease.

In light of the above, one of the issues focused on by developers is howto effectively improve the gas barrier characteristic of the flexiblegas barrier substrate without increasing the overall thickness of theflexible gas barrier substrate.

SUMMARY

A gas barrier substrate which has good gas barrier abilities is providedherein.

A fabricating method of a gas barrier substrate for fabricating a gasbarrier substrate with good gas barrier abilities is provided herein.

A package of an organic electro-luminescent device which has goodreliability is also provided herein.

A packaging method of an organic electro-luminescent device for ensuringgood reliability of the organic electro-luminescent device is furtherprovided herein.

The disclosure provides a gas barrier substrate which includes a firstgas barrier layer, a substrate, and a second gas barrier layer. Thefirst gas barrier layer has a central bonding surface and a peripheralbonding surface which surrounds the central bonding surface. Thesubstrate is bonded with the central bonding surface of the first gasbarrier layer, and the second gas barrier layer entirely covers thesubstrate and the first gas barrier layer. The second gas barrier layeris bonded with the substrate and the peripheral bonding surface of thefirst gas barrier layer. A minimum distance from an edge of thesubstrate to an edge of the first gas barrier layer is greater than athickness of the first gas barrier layer.

The disclosure provides a fabricating method of a gas barrier substrate,including: forming a de-bonding layer on a carrier; forming a lift-offlayer on the carrier and the de-bonding layer, forming the first gasbarrier layer on the lift-off layer, wherein the first gas barrier layerhas the central bonding surface and the peripheral bonding surface whichsurrounds the central bonding surface; forming the substrate on thecentral bonding surface of the first gas barrier layer and bonding thesubstrate with the central bonding surface; and forming the second gasbarrier layer to entirely cover the substrate and the first gas barrierlayer, wherein the minimum distance from the edge of the substrate tothe edge of the first gas barrier layer is greater than the thickness ofthe first gas barrier layer.

The disclosure provides a package of an organic electro-luminescentdevice. The package includes a first gas barrier substrate, a second gasbarrier substrate, and an organic electro-luminescent device. The firstgas barrier substrate includes a first gas barrier layer, a firstsubstrate, and a second gas barrier layer, wherein the first gas barrierlayer has a first central bonding surface and a first peripheral bondingsurface surrounding the first central bonding surface, the firstsubstrate is bonded with the first central bonding surface of the firstgas barrier layer, and the second gas barrier layer entirely covers thefirst substrate and the first gas barrier layer. The second gas barrierlayer is bonded with the first substrate the first peripheral surface ofthe first gas barrier layer, and a minimum distance from an edge of thefirst substrate to an edge of the first gas barrier layer is greaterthan a thickness of the first gas barrier layer. The first gas barriersubstrate is bonded with the second gas barrier substrate. The organicelectro-luminescent device is disposed between the first gas barriersubstrate and the second gas barrier substrate.

The disclosure provides a packaging method of an organicelectro-luminescent device, including: forming the organicelectro-luminescent device on the first gas barrier substrate; providingthe second gas barrier substrate; and bonding the first gas barriersubstrate with the second gas barrier substrate, so that the organicelectro-luminescent device is sealed between the first gas barriersubstrate and the second gas barrier substrate, wherein at least one ofthe first gas barrier substrate and the second gas barrier substrate isfabricated by the above fabricating method of the gas barrier substrate.

Several exemplary embodiments accompanied with figures are described indetail below to further describe the disclosure in detail.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide further understanding,and are incorporated in and constitute a part of this specification. Thedrawings illustrate exemplary embodiments and, together with thedescription, serve to explain the principles of the disclosure.

FIG. 1A is a schematic cross-sectional diagram of a conventionalflexible gas barrier substrate.

FIG. 2 is a schematic cross-sectional diagram of another conventionalflexible gas barrier substrate.

FIGS. 3A to 3E are schematic cross-sectional diagrams showing a processof fabricating a gas barrier substrate according to the first embodimentof the disclosure.

FIGS. 3D′ to 3E′ are schematic cross-sectional diagrams showing anotherprocess of fabricating a gas barrier substrate.

FIGS. 4A to 4E are schematic cross-sectional diagrams showing a processof fabricating a gas barrier substrate according to the secondembodiment of the disclosure.

FIGS. 4D′ to 4E′ are schematic cross-sectional diagrams showing anotherprocess of fabricating a gas barrier substrate.

FIGS. 5A to 5E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thethird embodiment of the disclosure.

FIGS. 6A to 6E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thefourth embodiment of the disclosure.

FIGS. 7A to 7E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thefifth embodiment of the disclosure.

DESCRIPTION OF EMBODIMENTS First Embodiment

FIGS. 3A to 3E are schematic cross-sectional diagrams showing a processof fabricating a gas barrier substrate according to the first embodimentof the disclosure. Please refer to FIG. 3A. First, a de-bonding layerDBL is formed on a carrier C, and a lift-off layer L is formed on thede-bonding layer DBL and the carrier C. According to the presentembodiment, the material of the de-bonding layer DBL is, for example, aparylene material, and the material of the lift-off layer L is, forexample, polyimide or another material which is capable of being liftoff from the de-bonding layer DBL. According to other embodiments of thedisclosure, the de-bonding layer DBL may be formed by performing asurface treatment on a surface of the carrier C. According to thepresent embodiment, the lift-off layer L may also be peeled off from thecarrier C along with the de-bonding layer DBL.

Please refer to FIG. 3B. A first gas barrier layer GB1 is formed on thelift-off layer L. The first gas barrier layer GB1 has a central bondingsurface S1 and a peripheral bonding surface S2 surrounding the centralbonding surface S1. According to the present embodiment, the first gasbarrier layer GB1 is, for example, a single thin film (such as a singlesilicon nitride layer) or a stacked layer formed by a plurality of thinfilms. For example, the first gas barrier layer GB1 is, for example,formed by alternately stacking at least one silicon nitride layer and atleast one spin-on glass (SOG) layer. According to other embodiments, thefirst gas barrier layer GB1 is formed by one or more pairs of a siliconnitride layer and an SOG layer. However, it should be noted thataccording to the disclosure, the number and material of the first gasbarrier layer GB1 are not limited to the above configuration.

Please refer to FIG. 3C, a pre-formed substrate SUB is provided, and thepre-formed substrate SUB is bonded with the central bonding surface S1.According to the present embodiment, the substrate SUB has a sidewall SWwhich is substantially perpendicular to the central bonding surface S1of the first gas barrier layer GB1. In addition, the material of thesubstrate SUB is, for example, polyimide or another flexible material.

Next, please refer to FIG. 3D. A second gas barrier layer GB2 is formedto entirely cover the substrate SUB and the first gas barrier layer GB1,wherein the second gas barrier layer GB2 is bonded with the substrateSUB and a peripheral bonding surface S2 of the first gas barrier layerGB. A minimum distance D from an edge (i.e. the sidewall SW) of thesubstrate SUB to an edge of the first gas barrier layer GB1 is greaterthan a thickness T of the first gas barrier layer GB1. In addition, thesecond gas barrier layer GB2 which covers the first gas barrier layerGB1 and the substrate SUB is, for example, a conformal thin film.

According to the present embodiment, the second gas barrier layer GB2is, for example, a single thin film (such as a single silicon nitridelayer) or a stacked layer formed by multiple thin films. For example,the second gas barrier layer GB2 is, for example, formed by alternatelystacking at least one silicon nitride layer and at least one SOG layer.According to other embodiments, the second gas barrier layer GB2 isformed by one or more pairs of a silicon nitride layer and an SOG layer.However, it should be noted that according to the disclosure, the numberand material of the second gas barrier layer GB2 are not limited to theabove configuration.

As shown in FIG. 3D, since the minimum distance D is greater than thethickness T of the first gas barrier layer GB1, the bonding strengthbetween the first gas barrier layer GB1 and the second gas barrier layerGB2 is effectively improved. If the first gas barrier layer GB1 and thesecond gas barrier layer GB2 have similar materials or the samematerial, the bonding between the first gas barrier layer GB1 and thesecond gas barrier layer GB2 is a type of homogeneous bonding, whichthus provides good bonding strength. In addition, since the minimumdistance D is greater than the thickness T of the first gas barrierlayer GB1, compared with the conventional art (FIG. 2), if water vaporis to permeate into the gas barrier substrate according to the presentembodiment, a longer permeation path is required.

Please refer to FIGS. 3D and 3E. After completing the fabrication of thesecond gas barrier layer GB2, a gas barrier substrate 300 is almostcomplete. According to the present embodiment, in order to detach thegas barrier substrate from the carrier C, the de-bonding layer DBL, thelift-off layer L, the first gas barrier layer GB1, and the second gasbarrier layer GB2 may be cut along cutting lines CL (as shown by thedashed lines CL in FIG. 3D) so that the lift-off layer L is separatedfrom the de-bonding layer DBL. According to the present embodiment, theaforementioned cutting process is, for example, a laser cutting processor another suitable cutting process.

Still referring to FIG. 3E, after the lift-off layer L is separated fromthe de-bonding layer DBL, the single gas barrier substrate 300 isobtained. The gas barrier substrate 300 includes the first gas barrierlayer GB1, the substrate SUB, and the second gas barrier layer GB2. Thefirst gas barrier layer GB1 has the central bonding surface S1 and theperipheral bonding surface S2 which surrounds the central bondingsurface S1. The substrate SUB is bonded with the central bonding surfaceS1 of the first gas barrier layer GB1, and the second gas barrier layerGB2 entirely covers the substrate SUB and the first gas barrier layerGB1. The second gas barrier layer GB2 is bonded with the substrate SUBand the peripheral bonding surface S2 of the first gas barrier layerGB1. A minimum distance D′ from the edge (which is the sidewall SW) ofthe substrate SUB to the edge of the first gas barrier layer GB1 isgreater than the thickness T of the first gas barrier layer GB1.

According to the present embodiment, the first gas barrier layer GB1 andthe second gas barrier layer GB2 are each, for example, a flexible gasbarrier layer, and the substrate SUB is, for example, a flexiblesubstrate. In addition, as shown in FIG. 3E, the edge of the first gasbarrier layer GB1 is substantially aligned with the edge of the secondgas barrier layer GB2.

FIGS. 3D′ to 3E′ are schematic cross-sectional diagrams showing anotherprocess of fabricating a gas barrier substrate. Please refer to FIGS.3D, 3E, 3D′, and 3E′. In FIGS. 3D and 3E, the second gas barrier layerGB2 which covers the first gas barrier layer GB1 and the substrate SUBis a conformal thin film, whereas in FIGS. 3D′ and 3E′, the second gasbarrier layer GB2 which covers the first gas barrier layer GB1 and thesubstrate SUB is a thin film which has a flat top surface.

Second Embodiment

FIGS. 4A to 4E are schematic cross-sectional diagrams showing a processof fabricating a gas barrier substrate according to the secondembodiment of the disclosure. Please refer to FIGS. 4A to 4E. Accordingto the present embodiment, a fabricating method of a gas barriersubstrate 400 is similar to that in the first embodiment. The maindifference in between is that a substrate SUB′ according to the presentembodiment has a tapered sidewall SW′, and an acute angle θ is includedbetween the tapered sidewall SW′ and the central bonding surface 51.

It should be noted that according to the present embodiment, thesubstrate SUB′ is formed, for example, by coating. In detail, accordingto the present embodiment, a material layer may first be coated on thecentral bonding surface S1. The material layer is then cured to form thesubstrate SUB′. Since the substrate SUB′ is formed by coating, the acuteangle θ is included between the sidewall SW′ of the substrate SUB′ andthe central bonding surface S1.

FIGS. 4D′ to 4E′ are schematic cross-sectional diagrams showing anotherprocess of fabricating a gas barrier substrate. Please refer to FIGS.4D, 4E, 4D′, and 4E′. In FIGS. 4D and 4E, the second gas barrier layerGB2 which covers the first gas barrier layer GB1 and the substrate SUB′is a conformal thin film, whereas in FIGS. 4D′ and 4E′, the second gasbarrier layer GB2 which covers the first gas barrier layer GB1 and thesubstrate SUB′ is a thin film which has a flat top surface.

Third Embodiment

FIGS. 5A to 5E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thethird embodiment of the disclosure. Please refer to FIG. 5A. First, ade-bonding layer DBL is formed on a carrier C, and a lift-off layer L isformed on the de-bonding layer DBL and the carrier C. According to thepresent embodiment, the material of the de-bonding layer DBL is, forexample, a parylene material, and the material of the lift-off layer Lis, for example, polyimide or another material which is capable of beinglift off from the de-bonding layer DBL. According to another embodimentof the disclosure, the de-bonding layer DBL may be formed by performinga surface treatment on the surface of the carrier C. According to thepresent embodiment, the lift-off layer L may also be peeled off from thecarrier C along with the de-bonding layer DBL.

Please refer to FIG. 5B. A third gas barrier layer GB3 is formed on thelift-off layer L. The third gas barrier layer GB3 has a second centralbonding surface S3 and a second peripheral bonding surface S4surrounding the second central bonding surface S4. According to thepresent embodiment, the third gas barrier layer GB3 is, for example, asingle layer thin film (such as a single layer silicon nitride layer) ora stacked layer formed by multiple thin films. For example, the thirdgas barrier layer GB3 is, for example, formed by alternately stacking atleast one silicon nitride layer and at least one SOG layer. According toother embodiments, the third gas barrier layer GB3 is formed by one ormore pairs of a silicon nitride layer and an SOG layer. However, itshould be noted that according to the disclosure, the number andmaterial of the third gas barrier layer GB3 are not limited to the aboveconfiguration.

Please refer to FIG. 5C, the second substrate SUB2 is provided, and thesecond substrate SUB2 is bonded with the second central bonding surfaceS3. According to the present embodiment, the material of the secondsubstrate SUB2 is, for example, polyimide or another flexible material.As shown in FIG. 5C, the lift-off layer L, the third gas barrier layerGB3, and the second substrate SUB2 form a gas barrier substrate 500.

Please refer to FIG. 5D. After the second substrate SUB2 is formed, anorganic electro-luminescent device OLED is formed on the secondsubstrate SUB2. According to the present embodiment, the organicelectro-luminescent device OLED is, for example, an active organicelectro-luminescent device or a passive organic electro-luminescentdevice. The organic electro-luminescent device OLED may be a display ora light source.

Please then refer to FIG. 5E. After the organic electro-luminescentdevice OLED is fabricated, the gas barrier substrate 300 is provided,and the gas barrier substrate 300 is bonded with the gas barriersubstrate 500, so that the organic electro-luminescent device OLED issealed between the gas barrier substrate 300 and the gas barriersubstrate 500. In detail, the gas barrier substrate 300 and the gasbarrier substrate 500 are bonded with each other by, for example, aframe adhesive 600. According to other embodiments, a frit such as aglass frit may be used to replace the frame adhesive 600, so that thegas barrier substrate 300 and the gas barrier substrate 500 are bondedwith each other.

According to the present embodiment, the gas barrier substrate 300 shownin FIG. 3E′ is used. However, the present embodiment does not limit thegas barrier substrate to be the one shown in FIG. 3E′. The gas barriersubstrate 300 or 400 shown in FIG. 3E, 4E, or 4E′ may also be used inthe present embodiment.

After the gas barrier substrate 300 and the gas barrier substrate 500are bonded with each other, in order to detach the gas barrier substrate500 from the carrier C, the de-bonding layer DBL, the lift-off layer L,and the third gas barrier layer GB3 may be cut along the cutting linesCL (as shown by the dashed lines CL in FIG. 3D′) so that the lift-offlayer L is separated from the de-bonding layer DBL. According to thepresent embodiment, the aforementioned cutting process is, for example,a laser cutting process or another suitable cutting process.

As shown in FIG. 5E, the package of the organic electro-luminescentaccording to the present embodiment includes the gas barrier substrate300, the gas barrier substrate 500, and the organic electro-luminescentdevice OLED. The gas barrier substrate 300 is shown in FIG. 3E′ and isbonded with the gas barrier substrate 500, and the organicelectro-luminescent device OLED is disposed between the gas barriersubstrate 300 and the gas barrier substrate 500.

Fourth Embodiment

FIGS. 6A to 6E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thefourth embodiment of the disclosure. Please refer to FIG. 6A. First, thede-bonding layer DBL is formed on the carrier C, and the lift-off layerL is formed on the de-bonding layer DBL and the carrier C. According tothe present embodiment, the material of the de-bonding layer DBL is, forexample, a parylene material, and the material of the lift-off layer Lis, for example, polyimide or another material which is capable of beinglift off from the de-bonding layer DBL. According to another embodimentof the disclosure, the de-bonding layer DBL may be formed by performinga surface treatment on the surface of the carrier C. According to thepresent embodiment, the lift-off layer may also be peeled off from thecarrier C along with the de-bonding layer DBL.

Please refer to FIG. 6B. The third gas barrier layer GB3 is formed onthe lift-off layer L. The third gas barrier layer GB3 has the secondcentral bonding surface S3 and the second peripheral bonding surface S4surrounding the second central bonding surface S4. According to thepresent embodiment, the third gas barrier layer GB3 is, for example, asingle thin film (such as a single silicon nitride layer) or a stackedlayer formed by a plurality of thin films. For example, the third gasbarrier layer GB3 is, for example, formed by alternately stacking atleast one silicon nitride layer and at least one SOG layer. According toother embodiments, the third gas barrier layer GB3 is formed by one ormore pairs of a silicon nitride layer and an SOG layer. However, itshould be noted that according to the disclosure, the number andmaterial of the third gas barrier layer GB3 are not limited to the aboveconfiguration.

Please refer to FIG. 6C, the second substrate SUB2 is provided, and thesecond substrate SUB2 is bonded with the second central bonding surfaceS3. According to the present embodiment, the material of the secondsubstrate SUB2 is, for example, polyimide or another flexible material.As shown in FIG. 5C, the lift-off layer L, the third gas barrier layerGB3, and the second substrate SUB2 form a gas barrier substrate 500′.

Please refer to FIG. 6D. After the second substrate SUB2 is formed, theorganic electro-luminescent device OLED is formed on the secondsubstrate SUB2. According to the present embodiment, the organicelectro-luminescent device OLED is, for example, an active organicelectro-luminescent device or a passive organic electro-luminescentdevice. The organic electro-luminescent device OLED may be a display ora light source.

After fabrication of the organic electro-luminescent device OLED iscomplete, a fourth gas barrier layer GB4 is formed to entirely cover theorganic electro-luminescent device OLED, the second substrate SUB2, andthe third gas barrier layer GB3. The fourth gas barrier layer GB4 isbonded with the organic electro-luminescent device OLED, the secondsubstrate SUB2, and the second peripheral bonding surface S4 of thethird gas barrier layer GB3, and a minimum distance D″ from an edge ofthe second substrate SUB2 to an edge of the third gas barrier layer GB3is greater than a thickness T′ of the third gas barrier layer GB3. Inaddition, the fourth gas barrier layer GB4 which covers the third gasbarrier layer GB3 and the second substrate SUB2 is, for example, aconformal thin film. According to other embodiments, the fourth gasbarrier layer GB4 may be a conformal thin film. As shown in FIG. 6D, thelift-off layer L, the third gas barrier layer GB3, the second substrateSUB2, and the fourth gas barrier layer GB4 form the gas barriersubstrate 500′.

According to the present embodiment, the fourth gas barrier layer GB4is, for example, a single thin film (such as a single silicon nitridelayer) or a stacked layer formed by a plurality of thin films. Thefourth gas barrier layer GB4 is, for example, formed by alternatelystacking at least one silicon nitride layer and at least one SOG layer.According to other embodiments, the fourth gas barrier layer GB4 isformed by one or more pairs of a silicon nitride layer and an SOG layer.However, it should be noted that according to the disclosure, the numberand material of the fourth gas barrier layer GB4 are not limited to theabove configuration.

As shown in FIG. 6D, since the minimum distance D″ is greater than thethickness T′ of the third gas barrier layer GB3, the bonding strengthbetween the third gas barrier layer GB3 and the fourth gas barrier layerGB4 is effectively improved. In addition, if the third gas barrier layerGB3 and the fourth gas barrier layer GB4 have similar materials or thesame material, the bonding between the third gas barrier layer GB3 andthe fourth gas barrier layer GB4 is a type of homogeneous bonding, whichthus provides good bonding strength.

Please then to FIG. 6E. After the organic electro-luminescent deviceOLED and the fourth gas barrier layer GB4 are fabricated, the gasbarrier substrate 300 is provided, and the gas barrier substrate 300 isbonded with the gas barrier substrate 500′, so that the organicelectro-luminescent device OLED is sealed between the gas barriersubstrate 300 and the gas barrier substrate 500′. In detail, the gasbarrier substrate 300 and the gas barrier substrate 500′ are bonded witheach other by, for example, an adhesive layer 700. In other words, thesecond has barrier layer GB2 and the fourth gas barrier layer GB4 arebonded with each other through the adhesive layer 700.

According to the present embodiment, the gas barrier substrate 300 shownin FIG. 3E′ is used. However, the present embodiment does not limit thegas barrier substrate to be the one shown in FIG. 3E′. The gas barriersubstrate 300 or 400 shown in FIG. 3E, 4E, or 4E′ may also be used inthe present embodiment.

After the gas barrier substrate 300 and the gas barrier substrate 500′are bonded with each other, in order to detach the gas barrier substrate500′ from the carrier C, the de-bonding layer DBL, the lift-off layer L,the third gas barrier layer GB3, and the fourth gas barrier layer GB4may be cut (as shown by the dashed lines) so that the lift-off layer Lis separated from the de-bonding layer DBL. According to the presentembodiment, the aforementioned cutting process is, for example, a lasercutting process or another suitable cutting process.

Fifth Embodiment

FIGS. 7A to 7E are schematic cross-sectional diagrams showing a processof packaging an organic electro-luminescent device according to thefifth embodiment of the disclosure. Please refer to FIG. 7A. First, thede-bonding layer DBL is formed on the carrier C, and the lift-off layerL is formed on the de-bonding layer DBL and the carrier C. According tothe present embodiment, the material of the de-bonding layer DBL is, forexample, a parylene material, and the material of the lift-off layer Lis, for example, polyimide or another material which is capable of beinglift off from the de-bonding layer DBL. According to another embodimentof the disclosure, the de-bonding layer DBL may be formed by performinga surface treatment on the surface of the carrier C. According to thepresent embodiment, the lift-off layer L may also be peeled off from thecarrier C along with the de-bonding layer DBL.

Please refer to FIG. 7B. The third gas barrier layer GB3 is formed onthe lift-off layer L. The third gas barrier layer GB3 has the secondcentral bonding surface S3 and the second peripheral bonding surface S4surrounding the second central bonding surface S4. According to thepresent embodiment, the third gas barrier layer GB3 is, for example, asingle thin film (such as a single silicon nitride layer) or a stackedlayer formed by a plurality of thin films. For example, the third gasbarrier layer GB3 is, for example, formed by alternately stacking atleast one silicon nitride layer and at least one SOG layer. According toother embodiments, the third gas barrier layer GB3 is formed by one ormore pairs of a silicon nitride layer and an SOG layer. However, itshould be noted that according to the disclosure, the number andmaterial of the third gas barrier layer GB3 are not limited to the aboveconfiguration.

Please refer to FIG. 7C, the second substrate SUB2 is provided, and thesecond substrate SUB2 is bonded with the second central bonding surfaceS3. According to the present embodiment, the material of the secondsubstrate SUB2 is, for example, polyimide or another flexible material.

Please then refer to FIG. 7D. After the second substrate SUB2 is formed,the fourth gas barrier layer GB4 is formed to entirely cover the secondsubstrate SUB2 and the third gas barrier layer GB3, wherein the fourthgas barrier layer GB4 is bonded with the second substrate SUB2 and theperipheral bonding surface S4 of the third gas barrier layer GB3, andthe minimum distance D″ from the edge of the second substrate SUB2 tothe edge of the third gas barrier layer GB3 is greater than thethickness T′ of the third gas barrier layer GB3. As shown in FIG. 7D,the lift-off layer L, the third gas barrier layer GB3, the secondsubstrate SUB2, and the fourth gas barrier layer GB4 form a gas barriersubstrate 500″.

Please refer to FIG. 7D. After the fourth gas barrier layer GB4 isformed, the organic electro-luminescent device OLED is formed on thefourth gas barrier layer GB4. According to the present embodiment, theorganic electro-luminescent device OLED is, for example, an activeorganic electro-luminescent device or a passive organicelectro-luminescent device. The organic electro-luminescent device OLEDmay be a display or a light source.

Please then to FIG. 7E. After the organic electro-luminescent deviceOLED is fabricated, the gas barrier substrate 300 is provided, and thegas barrier substrate 300 is bonded with the gas barrier substrate 500″,so that the organic electro-luminescent device OLED is sealed betweenthe gas barrier substrate 300 and the gas barrier substrate 500″. Indetail, the gas barrier substrate 300 and the gas barrier substrate 500″are bonded with each other by, for example, the frame adhesive 600.According to other embodiments, a frit such as a glass frit may be usedto replace the frame adhesive 600, so that the gas barrier substrate 300and the gas barrier substrate 500″ are bonded with each other.

According to the present embodiment, the gas barrier substrate 300 shownin FIG. 3E′ is used. However, the present embodiment does not limit thegas barrier substrate to be the one shown in FIG. 3E′. The gas barriersubstrate 300 or 400 shown in FIG. 3E, 4E, or 4E′ may also be used inthe present embodiment.

After the gas barrier substrate 300 and the gas barrier substrate 500″are bonded with each other, in order to detach the gas barrier substrate500″ from the carrier C, the de-bonding layer DBL, the lift-off layer L,the third gas barrier layer GB3, and the fourth gas barrier layer GB4may be cut (as shown by the dashed lines) so that the lift-off layer Lis separated from the de-bonding layer DBL. According to the presentembodiment, the aforementioned cutting process is, for example, a lasercutting process or another suitable cutting process.

According to the disclosure, since the gas barrier substrates which havegood gas barrier abilities are used for packaging the organicelectro-luminescent device, the reliability of the organicelectro-luminescent device is ensured.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of thedisclosed embodiments without departing from the scope or spirit of thedisclosure. In view of the foregoing, it is intended that the disclosurecover modifications and variations of this disclosure provided they fallwithin the scope of the following claims and their equivalents.

1. A gas barrier substrate, comprising: a first gas barrier layer havinga central bonding surface and a peripheral bonding surface whichsurrounds the central bonding surface; a substrate bonded with thecentral bonding surface of the first gas barrier layer; and a second gasbarrier layer covering the substrate and the first gas barrier layer,wherein the second gas barrier layer is bonded with the substrate andthe peripheral bonding surface of the first gas barrier layer, and aminimum distance from an edge of the substrate to an edge of the firstgas barrier layer is greater than a thickness of the first gas barrierlayer.
 2. The gas barrier substrate as claimed in claim 1, wherein thefirst gas barrier layer and the second gas barrier layer are each aflexible gas barrier layer, and the substrate is a flexible substrate.3. The gas barrier substrate as claimed in claim 1, wherein thesubstrate has a sidewall, and the sidewall is substantiallyperpendicular to the central bonding surface.
 4. The gas barriersubstrate as claimed in claim 1, wherein the substrate has a taperedsidewall, and an acute angle is included between the tapered sidewalland the central bonding surface.
 5. The gas barrier substrate as claimedin claim 1, wherein the edge of the first gas barrier layer issubstantially aligned with the edge of the second gas barrier layer. 6.The gas barrier substrate as claimed in claim 1, wherein the first gasbarrier layer comprises a silicon nitride layer.
 7. The gas barriersubstrate as claimed in claim 1, wherein the first gas barrier layercomprises a stacked layer, and the stacked layer comprises at least onesilicon nitride layer and at least one spin-on glass (SOG) layer.
 8. Thegas barrier substrate as claimed in claim 1, wherein the second gasbarrier layer comprises a silicon nitride layer.
 9. The gas barriersubstrate as claimed in claim 1, wherein the second gas barrier layercomprises a stacked layer, and the stacked layer comprises at least onesilicon nitride layer and at least one spin-on glass (SOG) layer. 10.The gas barrier layer as claimed in claim 1, further comprising alift-off layer disposed on the first gas barrier layer, wherein thelift-off layer and the substrate are respectively located at two sidesof the first gas barrier layer.
 11. A fabricating method of a gasbarrier substrate, comprising: forming a de-bonding layer on a carrier;forming a lift-off layer on the carrier; forming a first gas barrierlayer on the lift-off layer, the first gas barrier layer having acentral bonding surface and a peripheral bonding surface which surroundsthe central bonding surface; forming a substrate on the central bondingsurface of the first gas barrier layerand bonding the substrate with thecentral bonding surface; and forming a second gas barrier layer,covering the substrate and the first gas barrier layer, wherein thesecond gas barrier layer is bonded with the substrate and the peripheralbonding surface of the first gas barrier layer, and a minimum distancefrom an edge of the substrate to an edge of the first gas barrier layeris greater than a thickness of the first gas barrier layer.
 12. Thefabricating method of the gas barrier substrate as claimed in claim 11,wherein a method of forming the substrate on the central bonding surfacecomprises: coating a material layer on the central bonding surface; andcuring the material layer to form the substrate.
 13. The fabricatingmethod of the gas barrier substrate as claimed in claim 11, wherein amethod of forming the substrate on the central bonding surfacecomprises: providing a pre-formed substrate and bonding the pre-formedsubstrate with the central bonding surface.
 14. The fabricating methodof the gas barrier substrate as claimed in claim 11, wherein a method offorming the first gas barrier layer comprises: forming a silicon nitridelayer on the lift-off layer.
 15. The fabricating method of the gasbarrier substrate as claimed in claim 11, wherein a method of formingthe first gas barrier layer comprises: forming a stacked layer on thelift-off layer, wherein the stacked layer comprises at least one siliconnitride layer and at least one spin-on glass layer.
 16. The fabricatingmethod of the gas barrier substrate as claimed in claim 11, wherein amethod of forming the second gas barrier layer comprises: forming asilicon nitride layer on the lift-off layer.
 17. The fabricating methodof the gas barrier substrate as claimed in claim 11, wherein a method offorming the second gas barrier layer comprises: forming a stacked layeron the lift-off layer, wherein the stacked layer comprises at least onesilicon nitride layer and at least one spin-on glass layer.
 18. Thefabricating method of the gas barrier substrate as claimed in claim 11,further comprising cutting the de-bonding layer, the lift-off layer, thefirst gas barrier layer, and the second gas barrier layer, so that thelift-off layer is separated from the de-bonding layer.
 19. A package ofan organic electro-luminescent device, comprising: a first gas barriersubstrate, comprising: a first gas barrier layer having a first centralbonding surface and a first peripheral bonding surface which surroundsthe first central bonding surface; a first substrate bonded with thefirst central bonding surface of the first gas barrier layer; and asecond gas barrier layer covering the first substrate and the first gasbarrier layer, wherein the second gas barrier layer is bonded with thefirst substrate and the first peripheral bonding surface of the firstgas barrier layer, and a minimum distance from an edge of the firstsubstrate to an edge of the first gas barrier layer is greater than athickness of the first gas barrier layer; a second gas barrier substratebonded with the first gas barrier substrate; and an organicelectro-luminescent device disposed between the first gas barriersubstrate and the second gas barrier substrate.
 20. The package of theorganic electro-luminescent device as claimed in claim 19, wherein thesecond gas barrier substrate comprises: a third gas barrier layer havinga second central bonding surface and a second peripheral bonding surfacewhich surrounds the second central bonding surface; a second substratebonded with the second central bonding surface of the third gas barrierlayer, wherein the organic electro-luminescent device is disposed on thesecond substrate.
 21. The package of the organic electro-luminescentdevice as claimed in claim 19, wherein the second gas barrier substratecomprises: a third gas barrier layer having a second central bondingsurface and a second peripheral bonding surface which surrounds thesecond central bonding surface; a second substrate bonded with thesecond central bonding surface of the third gas barrier layer, whereinthe organic electro-luminescent device is disposed on the secondsubstrate; and a fourth gas barrier layer covering the second substrate,the organic electro-luminescent device, and the third gas barrier layer,wherein the fourth gas barrier layer is bonded with the secondsubstrate, the organic electro-luminescent device, and the secondperipheral bonding surface of the third gas barrier layer, and a minimumdistance from an edge of the second substrate to an edge of the thirdgas barrier layer is greater than a thickness of the third gas barrierlayer.
 22. The package of the organic electro-luminescent device asclaimed in claim 19, wherein the second gas barrier substrate comprises:a third gas barrier layer having a second central bonding surface and asecond peripheral bonding surface which surrounds the second centralbonding surface; a second substrate bonded with the second centralbonding surface of the third gas barrier layer; and a fourth gas barrierlayer covering the second substrate and the third gas barrier layer,wherein the fourth gas barrier layer is bonded with the second substrateand the second peripheral bonding surface of the third gas barrierlayer, a minimum distance from an edge of the second substrate to anedge of the third gas barrier layer is greater than a thickness of thethird gas barrier layer, and the organic electro-luminescent device isdisposed on the fourth gas barrier layer.
 23. A packaging method of anorganic electro-luminescent device, comprising: forming an organicelectro-luminescent device on a first gas barrier substrate; providing asecond gas barrier substrate; and bonding the first gas barriersubstrate and the second gas barrier substrate, so that the organicelectro-magnetic device is sealed between the first gas barriersubstrate and the second gas barrier substrate, wherein at least one ofthe first gas barrier substrate and the second gas barrier substrate isfabricated by the fabricating method of the gas barrier substrate asclaimed in claim 11.